the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 1999 mos field effect transistor NP22N055HLE, np22n055ile switching n-channel power mos fet industrial use data sheet document no. d14136ej3v0ds00 (3rd edition) date published march 2001 ns cp(k) printed in japan the mark shows major revised points. description these products are n-channel mos field effect transistors designed for high current switching applications. features ? channel temperature 175 degree rated ? super low on-state resistance r ds(on)1 = 37 m ? max. (v gs = 10 v, i d = 11 a) r ds(on)2 = 45 m ? max. (v gs = 5.0 v, i d = 11 a) ? low c iss : c iss = 730 pf typ. ? built-in gate protection diode absolute maximum ratings (t a = 25c) drain to source voltage v dss 55 v gate to source voltage v gss 20 v drain current (dc) i d(dc) 22 a drain current (pulse) note1 i d(pulse) 55 a total power dissipation (t a = 25c) p t 1.2 w total power dissipation (t c = 25c) p t 45 w single avalanche current note2 i as 14 / 5 a single avalanche energy note2 e as 19 / 25 mj channel temperature t ch 175 c storage temperature t stg ?55 to +175 c notes 1. pw 10 s, duty cycle 1 % 2. starting t ch = 25c, r g = 25 ? , v gs = 20 v 0 v (see figure 4.) thermal resistance channel to case r th(ch-c) 3.33 c/w channel to ambient r th(ch-a) 125 c/w ordering information part number package NP22N055HLE to-251 np22n055ile to-252 (to-251) (to-252)
data sheet d14136ej3v0ds 2 NP22N055HLE, np22n055ile electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit drain to source on-state resistance r ds(on)1 v gs = 10 v, i d = 11 a 29 37 m ? r ds(on)2 v gs = 5.0 v, i d = 11 a3545m ? r ds(on)3 v gs = 4.5 v, i d = 11 a3751m ? gate to source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2.0 2.5 v forward transfer admittance | y fs |v ds = 10 v, i d = 11 a510s drain leakage current i dss v ds = 55 v, v gs = 0 v10 a gate to source leakage current i gss v gs = 20 v, v ds = 0 v 10 a input capacitance c iss v ds = 25 v, v gs = 0 v, f = 1 mhz 730 1100 pf output capacitance c oss 110 170 pf reverse transfer capacitance c rss 52 95 pf turn-on delay time t d(on) i d = 11 a, v gs(on) = 10 v, v dd = 28 v, 9.0 20 ns rise time t r r g = 1 ? 6.0 16 ns turn-off delay time t d(off) 32 65 ns fall time t f 5.4 14 ns total gate charge q g1 i d = 22 a, v dd = 44 v, v gs = 10 v1523nc q g2 i d = 22 a, v dd = 44 v, v gs = 5 v 9 14 nc gate to source charge q gs 3nc gate to drain charge q gd 4.5 nc body diode forward voltage v f(s-d) i f = 22 a, v gs = 0 v1.0v reverse recovery time t rr i f = 22 a, v gs = 0 v, di/dt = 100a/ s37ns reverse recovery charge q rr 45 nc test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 ? 50 ? d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 ? d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1 % v gs wave form v ds wave form v gs v ds 10 % 0 0 90 % 90 % 90 % v gs(on) v ds t on t off t d(on) t r t d(off) t f 10 %10 %
data sheet d14136ej3v0ds 3 NP22N055HLE, np22n055ile typical characteristics (t a = 25 c) figure1. derating factor of forward bias safe operating area dt - percentage of rated power - % 0 0 25 50 75 100 125 150 175 200 20 40 60 80 100 t c - case temperature - ?c figure2. total power dissipation vs. case temperature t c - case temperature - ? c p t - total power dissipation - w 0 0 25 50 75 100 125 150 175 200 70 60 50 40 30 20 10 figure3. forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a 1 0.1 10 100 1000 1 10 100 t c = 25?c single pulse 0.1 i d(pulse) pw = 10 s 100 s 1 ms dc r ds(on) limited (at v gs = 10 v) i d(dc) power dissipation limited figure4. single avalanche energy derating factor starting t ch - starting channel temperature - ? c single pulse avalanche energy - mj 0 25 5 10 15 20 25 30 50 75 100 125 150 175 i as = 5 a 14 a 25 mj 19 mj pw - pulse width - s figure5. transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - ? c /w 10 0.01 0.1 1 100 1000 1 m 10 m 100 m 1 10 100 1000 single pulse t c = 25 ? c 10 100 r th(ch-c) = 3.33 ? c /w r th(ch-a) = 125 ? c /w
data sheet d14136ej3v0ds 4 NP22N055HLE, np22n055ile figure6. forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a 1 0.1 0.01 10 100 pulsed 1.0 2.0 3.0 4.0 5.0 6.0 v ds = 10 v t a = ? 40 ? c 25 ? c 75 ? c 150 ? c 175 ? c figure7. drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 0 0 40 60 12 34 pulsed 4.5 v 5.0 v v gs =10 v 20 10 30 50 figure8. forward transfer admittance vs. drain current i d - drain current - a | y fs | - forward transfer admittance - s 0.01 0.1 1 10 100 10 100 0.01 0.1 1 t a = 175 ? c 75 ? c 25 ? c ? 40 ? c figure9. drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m ? 0 0 2 4 6 8 10121416 10 20 30 40 50 60 70 80 pulsed i d = 11 a figure10. drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - m ? 0 10 20 30 40 50 60 70 80 1 0.1 10 100 pulsed 10 v 5.0 v v gs = 4.5 v figure11. gate to source threshold voltage vs. channel temperature t ch - channel temperature - ? c v gs(th) - gate to source threshold voltage - v 0 0.5 1.0 1.5 2.0 2.5 3.0 ? 50 0 50 100 150 v ds = v gs i d = 250 a
data sheet d14136ej3v0ds 5 NP22N055HLE, np22n055ile t ch - channel temperature - ? c figure12. drain to source on-state resistance vs. channel temperature r ds(on) - drain to source on-state resistance - m ? 0 10 20 30 40 50 60 70 80 90 ? 50 0 50 100 150 10 v 5.0 v v gs = 4.5 v i d = 11 a figure13. source to drain diode forward voltage i sd - diode forward current - a 0 0.5 1.0 1.5 v sd - source to drain voltage - v pulsed 0.1 0.01 1 10 100 v gs = 10 v v gs = 0 v figure14. capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 10 0.1 100 1000 10000 1 10 100 v gs = 0 v f = 1 mhz c oss c rss c iss figure15. switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 10 1 1 0.1 100 1000 10 100 t f t r t d(on) t d(off) figure16. reverse recovery time vs. drain current i f - drain current - a t rr - reverse recovery time - ns di/dt = 100 a/ s v gs = 0 v 1 0.1 10 1.0 10 100 1000 100 figure17. dynamic input/output characteristics v gs - gate to source voltage - v q g - gate charge - nc v ds - drain to source voltage - v 0 0 46 2 8 10 12 14 16 20 40 60 80 2 4 6 8 10 12 14 16 v ds v gs v dd = 44 v i d = 22 a 28 v 11 v
data sheet d14136ej3v0ds 6 NP22N055HLE, np22n055ile package drawings (unit: mm) 1)to-251 (mp-3) 2)to-252 (mp-3z) 5.0 0.2 2.3 0.2 0.5 0.1 1.1 0.2 6.5 0.2 2.3 typ. 2.3 typ. 5.5 0.2 1.6 0.2 7.0 min. 0.75 typ. 13.7 min. 1.5 + 0.2 ? 0.1 0.5 + 0.2 ? 0.1 0.5 + 0.2 ? 0.1 5.0 0.2 0.5 0.1 1.1 0.2 0.9 max. 0.8 max. 0.8 typ. 2.3 typ. 2.3 typ. 6.5 0.2 2.3 0.2 4.3 max. 0.8 typ. 2.0 min. 1.0 min. 1.8 typ. 1.5 + 0.2 ? 0.1 10.0 max. 0.7 typ. 5.5 0.2 remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. equivalent circuit source body diode gate protection diode gate drain
data sheet d14136ej3v0ds 7 NP22N055HLE, np22n055ile [memo]
NP22N055HLE, np22n055ile m8e 00. 4 the information in this document is current as of march, 2001. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
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